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题名: The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate
作者: Lu SL;  Wang JN;  Huang JS;  Bian LF;  Jiang DS;  Yang CL;  Dai JM;  Ge WK;  Wang YQ;  Zhang JY;  Shen DZ
发表日期: 2003
摘要: Zn1-xMnxSe thin films with different Mn compositions are grown by metal-organic chemical vapor deposition on GaAs substrate. Good crystallinity of sample is evidenced by X-ray diffraction and rocking-curve measurements. Photoluminescence (PL) properties were carefully studied. A dominant PL peak close to the band edge is observed at low temperature for samples with higher Mn concentration. The temperature-dependent PL and time-resolved photoluminescence show that this emission peak is associated with the recombination of exciton bound to Mn-induced impurity bound states. It is found that rapid thermal annealing can induce reorganization of Mn composition in alloys and significantly reduce the density of impurity induced by Mn incorporation and improve the intrinsic interband transition. (C) 2002 Elsevier Science B.V. All rights reserved.
KOS主题词: Photoluminescence;  Metal organic chemical vapor deposition;  atomic layer deposition;  gap
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Lu SL; Wang JN; Huang JS; Bian LF; Jiang DS; Yang CL; Dai JM; Ge WK; Wang YQ; Zhang JY; Shen DZ .The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate ,JOURNAL OF CRYSTAL GROWTH,2003,249 (3-4):538-543
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