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题名: Selective-area MOCVD growth for distributed feedback lasers integrated with vertically tapered self-aligned waveguide
作者: Qiu WB;  Wang W;  Dong J;  Zhou F;  Zhang JY
发表日期: 2003
摘要: The growth pressure and mask width dependent thickness enhancement factors of selective-area MOCVD. grow th were investigated in this article. A, high enhancement of 5.8 was obtained at 130 mbar with the mask width of 70 mum. Mismatched InGaAsP (-0.5%) at the maskless region which could ensure the material at butt-joint region to be matched to InP was successively grown by controlling the composition and mismatch modulation in the selective-area growth. The upper optical confinement layer and the butt-coupled tapered thickness waveguide were regrown simultaneously in separated confined heterostructure 1.55 gm distributed feedback laser, which not only offered the separated optimization of the active region and the integrated spotsize converter, but also reduced the difficulty of the butt-joint selective regrowth. A narrow beam of 9degrees and 12degrees in the vertical and horizontal directions, a low threshold current of 6.5 mA was fabricated by using this technique. (C) 2003 Elsevier Science B.V. All rights reserved.
KOS主题词: self-alignment
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Qiu WB; Wang W; Dong J; Zhou F; Zhang JY .Selective-area MOCVD growth for distributed feedback lasers integrated with vertically tapered self-aligned waveguide ,JOURNAL OF CRYSTAL GROWTH,2003 ,250 (3-4):583-587
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