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题名: Influence of coupling between Er3+, nc-Si and nonradiative centers on photoluminescence from Er3+-doped nc-Si/SiO2 films
作者: Chen CY;  Chen WD;  Wang YQ;  Song SF;  Xu ZJ
发表日期: 2003
摘要: Con-elation between nc-Si, Er3+ and nonradiative defects in Er-doped nc-Si/SiO2 films is studied. Upon the 514.5 run laser excitation, the samples exhibit a nanocrystal-related spectrum centered at around 750 nm and an Er3+ luminescence line at 1.54mum. With increasing Er3+ content in the films,the Er3+ emission becomes intense while the photoluminescence at 750 nm decreases. Hydrogen passivation of the samples is shown to result in increases of the two luminescence peaks. However, the effect of hydrogen treatment is different for the samples annealed at different temperatures. The experimental results show that the coupling between Er3+, nc-Si and noradiative centers has a great influence on photoluminescence from nc-Si/SiO2 < Er > films.
KOS主题词: Nanocrystals;  Implantation
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Chen CY; Chen WD; Wang YQ; Song SF; Xu ZJ .Influence of coupling between Er3+, nc-Si and nonradiative centers on photoluminescence from Er3+-doped nc-Si/SiO2 films ,ACTA PHYSICA SINICA,2003,52 (3):736-739
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