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题名: Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance
作者: Jin P;  Meng XQ;  Zhang ZY;  Li CM;  Xu B;  Liu FQ;  Wang ZG;  Li YG;  Zhang CZ;  Pan SH
发表日期: 2003
摘要: Self-assembled InAs quantum dots (QDs) have been fabricated by depositing 1.6, 1.8, 2.0 and 2.5 monolayer (ML) InAs on surfaces of the undoped-n(+) (UN+) type GaAs structure. Room temperature contactless electroreflectance (CER) was employed to study the built-in electric field and the surface Fermi level pinning of these QD-covered UN+ GaAs samples. The CER results show that 1.6 ML InAs QDs on GaAs do not modify the Fermi level, whereas for samples with more than 1.6 ML InAs coverage, the surface Fermi level is moved to the valence band maximum of GaAs by about 70 meV (which is independent of the InAs deposition thickness) compared to bare GaAs. It is concluded that the modification of InAs coverage on the Fermi level on the GaAs surface is due to the QDs, rather than to the wetting layer. (C) 2003 American Institute of Physics.
KOS主题词: Microscopy;  Acoustic microscopes;  Islands
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Jin P; Meng XQ; Zhang ZY; Li CM; Xu B; Liu FQ; Wang ZG; Li YG; Zhang CZ; Pan SH .Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance ,JOURNAL OF APPLIED PHYSICS,2003,93 (7):4169-4172
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