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题名: Metal-semiconductor-metal ultraviolet photodetector based on GaN
作者: Wang J;  Zhao DA;  Liu ZS;  Feng G;  Zhu JJ;  Shen XM;  Zhang BS;  Yang H
发表日期: 2003
摘要: A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with lambda = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 nA under 5 V bias, and is 15.3 nA under 10 V bias. A maximum responsivity of 0.166 A/W has been achieved under the illumination with lambda = 366 nm light and 15 V bias. It exhibits a typical sharp band-edge cutoff at the wavelength of 366 nm, and a high responsivity at the wavelength from 320 nm to 366 nm. Its responsivity under the illumination with lambda = 360 nm light increases when the bias voltage increases.
KOS主题词: MSM;  responsivity;  low noise;  Detectors;  Photodiodes;  gain
刊名: SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang J; Zhao DA; Liu ZS; Feng G; Zhu JJ; Shen XM; Zhang BS; Yang H .Metal-semiconductor-metal ultraviolet photodetector based on GaN ,SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY,2003,46 (2):198-203
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