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题名: A novel method of determining semiconductor parameters in EBIC and SEBIV modes of SEM
作者: Zhu SQ;  Rau EI;  Yang FH
发表日期: 2003
摘要: We present a novel method for determining semiconductor parameters such as diffusion length L, lifetime tau and surface recombination velocity S of minority carriers by employing scanning electron microscopy (SEM). This new method is applicable to both electron beam induced current (EBIC and surface electron beam induced voltage (SEBIV) modes in SEM. The quantitative descriptions for EBIC and SEBIV signals are derived. The parameters L, S and tau can be directly extracted from the expressions for EBIC or SEBIV signals and their relaxation characteristics in experiment. As an example, the values of L, S and tau for n-p junction and p-Si crystal are determined by using the novel method in EBIC or SEBIV mode. The carrier diffusion length of a p-Si crystal is determined to be 8.74 mum in SEBIV mode. It is very close to the normal diffusion length of 7.41 mum of this sample. The novel method is proved to be very helpful for the quantitative characterization of semiconductor materials and devices. Especially, the SEBIV mode in SEM shows great potential for investigating semiconductor structures nondestructively.
KOS主题词: diffusion length;  Extraction
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhu SQ; Rau EI; Yang FH .A novel method of determining semiconductor parameters in EBIC and SEBIV modes of SEM ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2003,18 (4):361-366
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