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题名: Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer
作者: Zhang ZY;  Yang CL;  Wei YQ;  Ye XL;  Jin P;  Li CM;  Meng XQ;  Xu B;  Wang ZG
发表日期: 2003
摘要: In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL integrated intensity ratio of the first excited state to the ground state for InAs QDs unexpectedly decreases with increasing temperature, which we attribute to the phonon bottleneck effect. We believe that these experimental results are closely related to the partially coupled quantum dots system and the large energy separation between the ground and the first excited states. (C) 2003 Elsevier Science Ltd. All rights reserved.
KOS主题词: Nanostructured materials;  Semiconductors;  Optical properties;  Epitaxy
刊名: SOLID STATE COMMUNICATIONS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang ZY; Yang CL; Wei YQ; Ye XL; Jin P; Li CM; Meng XQ; Xu B; Wang ZG .Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer ,SOLID STATE COMMUNICATIONS,2003 ,126 (7):391-394
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