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题名: Localized exciton dynamics in AlInGaN alloy
作者: Huang JS;  Dong X;  Luo XD;  Liu XL;  Xu ZY;  Ge WK
发表日期: 2003
摘要: Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-resolved PL (TRPL) at various temperatures. The fast red-shift of PL peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. This result provides evidence for the exciton localization in the quantum dot (QD)-like potentials in our AlInGaN alloy. The TRPL signals are found to be described by a stretched exponential function of exp[(-t/,tau)13], indicating the presence of a significant disorder in the material. The disorder is attributed to a randomly distributed QDs or clusters caused by indium fluctuations. By studying the dependence of the dispersive exponent beta on temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered QDs. Furthermore, the localized states are found to have 0D density of states up to 250 K, since the radiative lifetime remains almost unchanged with increasing temperature. (C) 2003 Elsevier Science Ltd. All rights reserved.
KOS主题词: Quantum dots;  Light emitting diodes;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  thermal activation;  Luminescence;  Transitions;  Relaxation;  Silicon;  Layers
刊名: SOLID STATE COMMUNICATIONS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Huang JS; Dong X; Luo XD; Liu XL; Xu ZY; Ge WK .Localized exciton dynamics in AlInGaN alloy ,SOLID STATE COMMUNICATIONS,2003 ,126 (8):473-477
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