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题名: X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates
作者: Shen XM;  Wang YT;  Zheng XH;  Zhang BS;  Chen J;  Feng G;  Yang H
发表日期: 2003
摘要: In order to understand the growth feature of GaN on GaAs (0 0 1) substrates grown by metalorganic chemical vapor deposition (MOCVD), the crystallinity of GaN buffer layers with different thicknesses was investigated by using double crystal X-ray diffraction (DCXRD) measurements. The XRD results showed that the buffer layers consist of predominantly hexagonal GaN (h-GaN) and its content increases with buffer layer thickness. The nominal GaN (111) reflections with chi at 54.74degrees can be detected easily, while (0 0 2) reflections are rather weak. The integrated intensity of reflections from (111) planes is 4-6 times that of (0 0 2) reflections. Possible explanations are presented. (C) 2003 Elsevier Science B.V. All rights reserved.
KOS主题词: buffer layers;  X-ray crystallography;  Metal organic chemical vapor deposition;  Nitrides;  Vapor phase epitaxy;  strain relaxation;  Temperature;  sedimentation;  Quality;  Diodes
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Shen XM; Wang YT; Zheng XH; Zhang BS; Chen J; Feng G; Yang H .X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates ,JOURNAL OF CRYSTAL GROWTH,2003 ,254 (1-2):23-27
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