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题名: Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells
作者: Bian LF;  Jiang DS;  Lu SL
发表日期: 2003
摘要: Thermal annealing of GaInAs/GaNAs quantum wells (QWs) as well as other nitrogen- and indium-contained QW structures grown by molecular beam epitaxy and its effect on optical properties are investigated. The photoluminescence (PL) and photovoltaic (PV) spectra of annealed GaInAs/GaNAs QWs show that the luminescence properties become degraded due to the N diffusion from the GaNAs barrier layers to the GaInAs well layer. Meantime, the annealing-induced blueshift of the PL peak in this QW system is mainly induced by the change of In distribution, suggesting that the In reorganization is greatly assisted by the N-induced defects. The elucidation of annealing effect in GaInAs/GaNAs QW samples is helpful for a better understanding to the annealing effect in the GaInNAs/GaAs QWs. (C) 2003 Elsevier Science B.V. All rights reserved.
KOS主题词: Diffusion;  Kirkendall effect;  Quantum wells;  atomic layer deposition;  Luminescence;  Origin
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Bian LF; Jiang DS; Lu SL .Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells ,JOURNAL OF CRYSTAL GROWTH,2003 ,253 (1-4):155-160
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