高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate
作者: Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Feng G;  Shen XM;  Wang YT;  Yang H;  Zheng WC
发表日期: 2003
摘要: The influence of reactor pressure on GaN nucleation layer (NL) and the quality of subsequent GaN on sapphire is studied. The layers were grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on c-plane sapphire substrates and investigated by in situ laser reflectometry, atomic force microscope, scanning electron microscope, X-ray diffraction and photoluminescence. With the increase of reactor pressure prior to high-temperature GaN growth, the size of GaN nuclei formed after annealing decreases, the spacing between nucleation sites increases and the coalescence of GaN nuclei is deferred. The optical and crystalline qualities of GaN epilayer were improved when NLs were deposited at high pressure. The elongated lateral overgrowth of GaN islands is responsible for the quality improvement. (C) 2003 Elsevier Science B.V. All rights reserved.
KOS主题词: Metal organic chemical vapor deposition;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Threading dislocations;  Temperature;  EVOLUTION;  Surface;  atomic layer deposition
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
1523.pdf306KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Chen J; Zhang SM; Zhang BS; Zhu JJ; Feng G; Shen XM; Wang YT; Yang H; Zheng WC .Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate ,JOURNAL OF CRYSTAL GROWTH,2003 ,254 (3-4):348-352
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Chen J]的文章
 [Zhang SM]的文章
 [Zhang BS]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Chen J]的文章
 [Zhang SM]的文章
 [Zhang BS]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发