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题名: Study of optical properties in GaAs1-xSbx/GaAs single quantum wells
作者: Luo XD;  Bian LF;  Xu ZY;  Luo HL;  Wang YQ;  Wang JN;  Ge WK
发表日期: 2003
摘要: GaAsSb/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy are studied by selectively-excited photoluminescence (SEPL) measurement. For the first time, we have simultaneously observed the PL, from both type I and type II transitions in GaAsSb/GaAs heterostructure in the SEPL. The two transitions exhibit different PL, behaviours under different excitation energy. As expected, the peak energy of type I emission remains constant in the whole excitation energy range we used, while type U transition shows a significant blue shift with increasing excitation energy. The observed blue shift is well explained in terms of electron-hole charge separation model at the interface. Time-resolved(TR) PL exhibits more type 11 characteristic of GaAsSb/GaAs QW. Moreover, the results of the excitation-power-dependent PL and TRPL provide more direct information on the type-II nature of the band alignment in GaAsSb/GaAs quantum-well structures. By combining the experimental results with some simple calculations, we have obtained the strained and unstrained valence band offsets of Q(v) = 1.145 and Q(v)(0) = 0. 76 in our samples, respectively.
KOS主题词: room temperature;  Gallium arsenide;  Operation
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Luo XD; Bian LF; Xu ZY; Luo HL; Wang YQ; Wang JN; Ge WK .Study of optical properties in GaAs1-xSbx/GaAs single quantum wells ,ACTA PHYSICA SINICA,2003 ,52 (7):1761-1765
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