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题名: Time-resolved photoluminescence studies of AlInGaN alloys
作者: Dong X;  Huang JS;  Li DB;  Liu XL;  Xu ZY;  Wang ZG
发表日期: 2003
摘要: We study the two samples of AIInGaN, i.e., 1-mum GaN grown at 1030degreesC on the buffer and followed by a 0.6-mum-thick epilayer of AIInGaN under the low pressure of 76 Torr and the AIInGaN layer deposited directly on the buffer layer without the high-temperature GaN layer, by temperature-dependent photoluminescence (PL) spectroscopy and picosecond time-resolved photoluminescence (TRPL) spectroscopy. The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures, indicating significant disorder in the material. We attribute the disorder to nanoscale quantum dots or discs of high indium concentration. Temperature dependence of dispersive exponent beta shows that the stretched exponential decay of the two samples comes from different mechanisms. The different depths of the localization potential account for the difference, which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.
KOS主题词: Luminescence
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Dong X; Huang JS; Li DB; Liu XL; Xu ZY; Wang ZG .Time-resolved photoluminescence studies of AlInGaN alloys ,CHINESE PHYSICS LETTERS,2003,20 (7):1148-1150
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