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题名: Structural and photoluminescent properties of ternary Zn1-xCdxO crystal films grown on Si(111) substrates
作者: Ye ZZ;  Ma DW;  He JH;  Huang JY;  Zhao BH;  Luo XD;  Xu ZY
发表日期: 2003
摘要: The ternary Zn1-xCdxO (0less than or equal toxless than or equal to0.6) alloying films with highly c-axis orientation have been deposited on Si(111) substrates by direct current reactive magnetron sputtering method. X-ray diffraction measurement indicates that the wurtzite-type structure of ZnO can be stabilized up to nominal Cd content x similar to 0.6 without cubic CdO phase separation. The lattice parameter c of Zn1-xCdxO increases almost linearly from 5.229 Angstrom (x = 0) to 5.247 Angstrom (x = 0.6), indicating that Cd substitution takes place on the Zn lattice sites. The photoluminescence spectra of the Zn1-xCdxO thin films measured at 12 K display a substantial red shift (similar to0.3 eV) in the near-band-edges (NBEs) emission of ZnO: from 3.39 eV of ZnO to 3.00 eV of Zn0.4Cd0.6O. The direct modulation of band gap caused by Zn/Cd substitution is responsible for the red shift effect in NBE emission of ZnO. (C) 2003 Elsevier Science B.V. All rights reserved.
KOS主题词: characterization;  biological specimen preparation;  Ion beam lithography;  Alloys;  Zinc compounds;  Thin films;  room temperature;  Spray pyrolysis;  emission;  alloy
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Ye ZZ; Ma DW; He JH; Huang JY; Zhao BH; Luo XD; Xu ZY .Structural and photoluminescent properties of ternary Zn1-xCdxO crystal films grown on Si(111) substrates ,JOURNAL OF CRYSTAL GROWTH,2003,256 (1-2):78-82
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