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题名: Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon
作者: Xu YY;  Liao XB;  Kong GL;  Zeng XB;  Hu ZH;  Diao HW;  Zhang SB
发表日期: 2003
摘要: Hydrogenated silicon (Si:H) films near the threshold of crystallinity were prepared by very high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) using a wide range of hydrogen dilution R-H = [H-2]/[SiH4] values of 2-100. The effects of H dilution R-H on the structural properties of the films were investigated using micro-Raman scattering and Fourier transform infrared (FTIR) absorption spectroscopy. The obtained Raman spectra show that the H dilution leads to improvements in the short-range order and the medium-range order of the amorphous network and then to the morphological transition from amorphous to crystalline states. The onset of this transition locates between R-H = 30 and 40 in our case, and with further increasing R-H from 40 to 100, the nanocrystalline volume fraction increases from similar to23% to 43%, and correspondingly the crystallite size enlarges from similar to2.8 to 4.4 nm. The FTIR spectra exhibit that with R-H increasing, the relative intensities of both the SiH stretching mode component at 2100 cm(-1) and wagging mode component at 620 cm(-1) increase in the same manner. We assert that these variations in IR spectra should be associated with the formation of paracrystalline structures in the low H dilution films and nanocrystalline structures in the high H dilution films. (C) 2003 Elsevier Science B.V. All rights reserved.
KOS主题词: Nanostructured materials;  excitation frequency;  sedimentation;  astrophysical plasma;  Laminar flow;  Space plasmas;  Temperature
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Xu YY; Liao XB; Kong GL; Zeng XB; Hu ZH; Diao HW; Zhang SB .Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon ,JOURNAL OF CRYSTAL GROWTH,2003,256 (1-2):27-32
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