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题名: Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
作者: Hu GQ;  Kong X;  Wan L;  Wang YQ;  Duan XF;  Lu Y;  Liu XL
发表日期: 2003
摘要: We report the transmission electron microscopy (TEM) study of the microstructure of wurtzitic GaN films grown on Si(I I I) substrates with AlN buffer layers by metalorganic chemical vapor deposition (MOCVD) method. An amorphous layer was formed at the interface between Si and AlN when thick GaN film was grown. We propose the amorphous layer was induced by the large stress at the interface when thick GaN was grown. The In0.1Ga0.9N/GaN multiple quantum well (MQW) reduced the dislocation density by obstructing the mixed and screw dislocations from passing through the MQW. But no evident reduction of the edge dislocations by the MQW was observed. It was found that dislocations located at the boundaries of grains slightly in-plane misoriented have screw component. Inversion domain is also observed. (C) 2003 Elsevier B.V. All rights reserved.
KOS主题词: Dislocation;  Transmission electron microscopy;  Metal organic chemical vapor deposition;  atomic layer deposition;  Electrons--Diffraction;  Dislocations;  Microscopy;  Acoustic microscopes;  Layer
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Hu GQ; Kong X; Wan L; Wang YQ; Duan XF; Lu Y; Liu XL .Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition ,JOURNAL OF CRYSTAL GROWTH,2003,256 (3-4):416-423
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