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题名: Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD
作者: Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Shen XM;  Feng G;  Liu JP;  Wang YT;  Yang H;  Zheng WC
发表日期: 2003
摘要: The morphological evolution of GaN thin films grown on sapphire by metalorganic chemical vapor deposition was demonstrated to depend strongly on the growth pressure of GaN nucleation layer (NL). For the commonly used two-step growth process, a change in deposition pressure of NL greatly influences the growth mode and morphological evolution of the following GaN epitaxy. By means of atomic force microscopy and scanning electron microscope, it is shown that the initial density and the spacing of nucleation sites on the NL and subsequently the growth mode of FIT GaN epilayer may be directly controlled by tailoring the initial low temperature NL growth pressure. A mode is proposed to explain the TD reduction for NL grown at relatively high reactor pressure. (C) 2003 Elsevier B.V. All rights reserved.
KOS主题词: Surface contamination;  Metal organic chemical vapor deposition;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Light emitting diodes;  Quality;  Temperature
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Chen J; Zhang SM; Zhang BS; Zhu JJ; Shen XM; Feng G; Liu JP; Wang YT; Yang H; Zheng WC .Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD ,JOURNAL OF CRYSTAL GROWTH,2003,256 (3-4):248-253
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