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题名: Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers
作者: Zhang W;  Xu YQ;  Niu ZC;  Wu RH
发表日期: 2003
摘要: Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layer on the band structure, gain and differential gain of GaInNAs/GaAs quantum well lasers have been investigated. The results show that the GaNAs barrier has a disadvantage in increasing the density of states in the conduction band. Meanwhile, the multilayer quantum wells need higher transparency carrier density than the GaInNAs/GaAs single quantum well with the same wavelength. However, they help to suppress the degradation of the differential gain. The calculation also shows that from the viewpoint of band structure, the strain-compensated structure and the strain-mediated structure have similar features.
KOS主题词: Luminescence;  Diodes;  Alloys
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhang W; Xu YQ; Niu ZC; Wu RH .Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers ,CHINESE PHYSICS LETTERS,2003 ,20 (8):1261-1263
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