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题名: Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance
作者: Jin P;  Pan SH;  Li YG;  Zhang CZ;  Wang ZG
发表日期: 2003
摘要: Photoreflectance (PR) has been used to study surface electronic properties (electric field, Fermi level pinning, and density of surface states) of undoped-n(+) (UN+) GaAs treated in the solution of ammonium sulfide in isopropanol. Complex Fourier transformation (CFT) of PR spectra from passivated surface shows that the sulfur overlay on GaAs surface makes no contribution to Franz-Keldysh oscillations (FKOs). The barrier height measured by PR is derived from surface states directly, rather than the total barrier height, which includes the potentials derived from Ga-S and As-S dipole layers. Comparing with native oxidated surface, the passivation leads to 80 meV movement of surface Fermi level towards the conduction band minimum, and reduction by more than one order in density of surface states. (C) 2003 Elsevier Science B.V. All rights reserved.
KOS主题词: Photoemission;  Electron paramagnetic resonance spectroscopy;  alpha-particle spectra;  Optical spectrometers;  Spectrum analysis;  Enhancement
刊名: APPLIED SURFACE SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Jin P; Pan SH; Li YG; Zhang CZ; Wang ZG .Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance ,APPLIED SURFACE SCIENCE,2003 ,218 (1-4):210-214
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