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题名: Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)
作者: Zhang BS;  Wu M;  Shen XM;  Chen J;  Zhu JJ;  Liu JP;  Feng G;  Zhao DG;  Wang YT;  Yang H
发表日期: 2003
摘要: The influences of AlN buffer thickness on the optical and the crystalline properties of metalorganic chemical vapor deposition wurtzite GaN layers on Si(I 11) substrate have been investigated. High-resolution X-ray diffraction and photoluminescence measurement reveal that the thickness of AlN buffer exerts a strong influence on the distribution of dislocation and stress in GaN epilayer. The evidence is further reinforced by atomic force microscopic observation of AlN nucleation process. The optimum thickness of AlN buffer to effectively suppress Si diffusion has been determined by secondary-ion mass spectroscopy to be in the range of 13-20 nm. In addition, it is found that appropriate Si diffusion in AlN buffer helps to compensate the tensile strain in GaN, which subsequently improves the optical quality of GaN on Si(I 1, 1), and reduces the cracks over the GaN surface. (C) 2003 Elsevier B.V. All rights reserved.
KOS主题词: Metal organic chemical vapor deposition;  Nitrides;  atomic layer deposition;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Surfaces;  Silicon;  Photography--Films;  Finite volume method
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang BS; Wu M; Shen XM; Chen J; Zhu JJ; Liu JP; Feng G; Zhao DG; Wang YT; Yang H .Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) ,JOURNAL OF CRYSTAL GROWTH,2003,258 (1-2):34-40
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