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题名: Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate
作者: Zhang ZC;  Chen YH;  Li DB;  Zhang FQ;  Yang SY;  Ma BS;  Sun GS;  Wang ZG;  Zhang XP
发表日期: 2003
摘要: The hydrogen-implanted Si substrate has been used for the fabrication of the "compliant substrate", which can accommodate the mismatch strain during the heteroepitaxy. The compliance of the substrate can be modulated by the energy and dose of implanted hydrogen. In addition, the defects caused by implantation act as the gettering center for the internal gettering of the harmful metallic impurities. Compared with SiC films growth on substrate without implantation. all the measurements indicated that the mismatch strains in the SiC films grown on this substrate have been released and the crystalline qualities have been improved. It is a practical technique used for the compliant substrate fabrication and compatible with the semiconductor industry. (C) 2003 Elsevier B.V. All rights reserved.
KOS主题词: Substrate;  Silicon;  Relaxation;  mechanism;  Defects;  Layers
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhang ZC; Chen YH; Li DB; Zhang FQ; Yang SY; Ma BS; Sun GS; Wang ZG; Zhang XP .Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate ,JOURNAL OF CRYSTAL GROWTH,2003,257 (3-4):321-325
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