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题名: RBS/channeling study and photoluminscence properties of Er-implanted GaN
作者: Song SF;  Zhou SQ;  Chen WD;  Zhu JJ;  Chen CY;  Xu ZJ
发表日期: 2003
摘要: The Raman back scattering/channeling technique was used to analyze the damage recovery at different annealing temperatures and to determine the lattice location of the Er-implanted GaN samples. A better damage recovery was observed with increasing annealing temperature below 1000degreesC, but a complete recovery of the implantation damage cannot be achieved. For a sample annealed for at 900degreesC 30 min the Er and Ga angular scans across the <0001> axis was measured indicating that about 76% of Er ions occupies substitutional sites. Moreover, the photoluminscence (PL) properties of Er-implanted GaN thin films have been also studied. The experimental results indicate that those samples annealed at a higher temperature below 1000degreesC had a stronger 1539nm PL intensity. The thermal quenching of PL intensity for samples annealed at 900degreesC measured at temperatures from 15K to 300K is 30%.
KOS主题词: Erbium;  Erbium;  Photoluminescence;  Electroluminescence
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Song SF; Zhou SQ; Chen WD; Zhu JJ; Chen CY; Xu ZJ .RBS/channeling study and photoluminscence properties of Er-implanted GaN ,ACTA PHYSICA SINICA,2003,52 (10):2558-2562
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