高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Electronic structure of coupled vertically stacked self-assembled InAs quantum disks in a vertical electric field
作者: Liu JL;  Li SS;  Niu ZC;  Yang FH;  Feng SL
发表日期: 2003
摘要: In the framework of the effective-mass and adiabatic approximations, by setting the effective-mass of electron in the quantum disks (QDs) different from that in the potential barrier material, we make some improvements in the calculation of the electronic energy levels of vertically stacked self-assembled InAs QD. Comparing with the results when an empirical value was adopted as the effective-mass of electron of the system, we can see that the higher levels become heightened. Furthermore, the Stark shifts of the system of different methods are compared. The Stark shifts of holes are also studied. The vertical electric field changes the splitting between the symmetric level and the antisymmetric one for the same angular momentum. (C) 2003 Elsevier Ltd. All rights reserved.
KOS主题词: adiabatic approximation;  Stark effect;  Splitting;  Exciton
刊名: SUPERLATTICES AND MICROSTRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
1457.pdf535KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Liu JL; Li SS; Niu ZC; Yang FH; Feng SL .Electronic structure of coupled vertically stacked self-assembled InAs quantum disks in a vertical electric field ,SUPERLATTICES AND MICROSTRUCTURES,2003 ,33 (1-2):29-40
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Liu JL]的文章
 [Li SS]的文章
 [Niu ZC]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Liu JL]的文章
 [Li SS]的文章
 [Niu ZC]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发