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题名: Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition
作者: Zheng XH;  Jiang DS;  Johnson S;  Zhang YH
发表日期: 2003
摘要: The structural and optical properties of GaAsSb/GaAs quantum wells (QWs) and strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP QWs grown on a GaAs substrate by molecular beam epitaxy are investigated using high-resolution x-ray diffraction and photoluminescence (PL) measurements. We demonstrated that the insertion of tensile GaAsP layers into the active region of GaAsSb/GaAs QWs effectively improves the structural and optical quality. Even the Sb composition is as high as 0.39. The PL spectra at 11 K and room temperature indicate that the PL peak of strain-compensated QWs has a narrower linewidth and higher intensity in comparison to the sample without strain compensation. The results of PL peak blueshift with increasing excitation show the strain-compensated GaAsSb/GaAs interface characteristic of type-I band alignment. (C) 2003 American Institute of Physics.
KOS主题词: Gallium arsenide;  metallic superlattices
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zheng XH; Jiang DS; Johnson S; Zhang YH .Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition ,APPLIED PHYSICS LETTERS,2003 ,83 (20):4149-4151
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