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题名: Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate
作者: Zhang ZC;  Chen YH;  Yang SY;  Zhang FQ;  Ma BS;  Xu B;  Zeng YP;  Wang ZG;  Zhang XP
发表日期: 2003
摘要: Various low-temperature (LT) ultra-thin buffer layers have been fabricated on the GaAs (001) substrate. The buffer layer is decoupled from the host substrate by introducing low-temperature defects. The 400 nm In0.25Ga0.75As films were grown on these substrates to test the 'compliant' effects of the buffer layers. Atomic force microscopy, photoluminescence, double crystal x-ray diffraction and transmission electron microscopy were used to estimate the quality of the ln(0.25)Ga(0.75)As layer. The measurements indicated that the misfit strains in the epilayer can be accommodated by the LT ultra-thin buffer layer. The strain accommodation effects of the LT defects have been discussed in detail.
KOS主题词: Relaxation;  Metric system;  Silicon;  Heterostructures;  Dynamics
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang ZC; Chen YH; Yang SY; Zhang FQ; Ma BS; Xu B; Zeng YP; Wang ZG; Zhang XP .Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2003 ,18 (11):955-959
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