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题名: Annealing and activation of silicon implanted in semi-insulating InP substrates
作者: Dong HW;  Zhao YW;  Li JM
发表日期: 2003
摘要: We have investigated the annealing and activation of silicon implanted in both as-grown Fe-doped semi-insulating (SI) InP substrate and undoped SI InP substrate obtained by annealing high purity conductive InP wafer (wafer-annealed). Si implantations were performed at an energy of 500 keV and a dose of 1 X 10(15) cm(-2). Following the implantations, rapid thermal annealing (RTA) cycles were carried out for 30 s at different temperatures. The results of Raman measurements show that for 700degreesC/30s RTA, the two Si-implanted SI InP substrates have acquired a high degree of lattice recovery and electrical activation. However, further Hall measurements indicate that the carrier concentration of the wafer-annealed SI InP substrate is about three times higher than that of the as-grown Fe-doped SI InP substrate. The difference can be ascribed to the low Fe concentration of the wafer-annealed SI InP substrate.These experimental data imply that the use of the wafer-annealed SI InP substrate can be conducive to the improvement of InP-based device performances. (C) 2003 Elsevier Ltd. All rights reserved.
KOS主题词: Ion implantation;  Silicon;  Rapid thermal processing;  Heat treatment;  ACTIVATION;  Iron;  wafers;  Uniformity;  Variability;  Pressure
刊名: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Dong HW; Zhao YW; Li JM .Annealing and activation of silicon implanted in semi-insulating InP substrates ,MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2003,6 (4):215-218
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