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题名: Broadband external cavity tunable quantum dot lasers with low injection current density
作者: Lv XQ;  Jin P;  Wang WY;  Wang ZG
发表日期: 2010
摘要: Broadband grating-coupled external cavity laser, based on InAs/GaAs quantum dots, is achieved. The device has a wavelength tuning range from 1141.6 nm to 1251.7 nm under a low continuous-wave injection current density (458 A/cm(2)). The tunable bandwidth covers consecutively the light emissions from both the ground state and the 1st excited state of quantum dots. The effects of cavity length and antireflection facet coating on device performance are studied. It is shown that antireflection facet coating expands the tuning bandwidth up to similar to 150 nm, accompanied by an evident increase in threshold current density, which is attributed to the reduced interaction between the light field and the quantum dots in the active region of the device.
KOS主题词: Light emitting diodes;  Light emitting diodes;  emission;  Electron paramagnetic resonance spectroscopy;  alpha-particle spectra;  Optical spectrometers;  Spectrum analysis;  Infrared spectra;  Spectrum analysis
刊名: OPTICS EXPRESS
专题: 中科院半导体材料科学重点实验室_期刊论文

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推荐引用方式:
Lv XQ, Jin P, Wang WY, Wang ZG.Broadband external cavity tunable quantum dot lasers with low injection current density.OPTICS EXPRESS,2010,18(9):8916-8922
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