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Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure
You JB; Zhang XW; Zhang SG; Tan HR; Ying J; Yin ZG; Zhu QS; Chu PK (Chu Paul K.); Zhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: xwzhang@semi.ac.cn; paul.chu@cityu.edu.hk
2010
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume107Issue:8Pages:Art. No. 083701
Abstractn-ZnO/p-Si heterojunction light-emitting diodes (LEDs) show weak defect-related electroluminescence (EL). In order to analyze the origin of the weak EL, the energy band alignment and interfacial microstructure of ZnO/Si heterojunction are investigated by x-ray photoelectron spectroscopy. The valence band offset (VBO) is determined to be 3.15 +/- 0.15 eV and conduction band offset is -0.90 +/- 0.15 eV, showing a type-II band alignment. The higher VBO means a high potential barrier for holes injected from Si into ZnO, and hence, charge carrier recombination takes place mainly on the Si side rather than the ZnO layer. It is also found that a 2.1 nm thick SiOx interfacial layer is formed at the ZnO/Si interface. The unavoidable SiOx interfacial layer provides to a large number of nonradiative centers at the ZnO/Si interface and gives rise to poor crystallinity in the ZnO films. The weak EL from the n-ZnO/p-Si LEDs can be ascribed to the high ZnO/Si VBO and existence of the SiOx interfacial layer.
metadata_24国际
KeywordLight-emitting-diodes Spectroscopy Epitaxy Growth Film Sio2
Subject Area半导体材料
Funding Organization"863" project of China 2009AA03Z305 National Natural Science Foundation of China 60876031
Indexed BySCI
Language英语
Date Available2010-05-24
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11232
Collection中科院半导体材料科学重点实验室
Corresponding AuthorZhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: xwzhang@semi.ac.cn; paul.chu@cityu.edu.hk
Recommended Citation
GB/T 7714
You JB,Zhang XW,Zhang SG,et al. Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure[J]. JOURNAL OF APPLIED PHYSICS,2010,107(8):Art. No. 083701.
APA You JB.,Zhang XW.,Zhang SG.,Tan HR.,Ying J.,...&paul.chu@cityu.edu.hk.(2010).Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure.JOURNAL OF APPLIED PHYSICS,107(8),Art. No. 083701.
MLA You JB,et al."Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure".JOURNAL OF APPLIED PHYSICS 107.8(2010):Art. No. 083701.
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