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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: 10 GHz optical short pulse generation using tandem electroabsorption modulators monolithically integrated with distributed feedback laser by ultra-low-pressure selective area growth
作者: Zhao Q;  Pan JQ;  Zhang J;  Zhou GT;  Wu J;  Zhou F;  Wang BJ;  Wang LF;  Wang W
发表日期: 2006
摘要: In this work, a novel light source of tandem InGaAsP/InGaAsP multiple quantum well electroabsoption modulator( EAM ) monolithically integrated with distributed feedback laser is fabricated by ultra-low-pressure ( 22 x 10(2) Pa ) selective area growth metal-organic chemical vapor diposition technique. Superior device performances have been obtained, such as low threshold current of 19 mA, output light power of 4.5 mW, and over 20 dB extinction ratio at 5 V applied voltage when coupled into a single mode fiber. Over 10 GHz 3dB bandwidth in EAM part is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device, 10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained due to the gate operation effect of tandem EAMs.
KOS主题词: Application-specific integrated circuits;  Optical interconnects
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhao Q; Pan JQ; Zhang J; Zhou GT; Wu J; Zhou F; Wang BJ; Wang LF; Wang W .10 GHz optical short pulse generation using tandem electroabsorption modulators monolithically integrated with distributed feedback laser by ultra-low-pressure selective area growth ,ACTA PHYSICA SINICA,2006,55(1):261-266
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