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题名: Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure
作者: Peng CT;  Chen NF;  Wu JL;  Yin ZG;  Yu Y
发表日期: 2005
摘要: The growth of highly lattice-mismatched InAs0.3Sb0.7 films on (100) GaAs Substrates by magnetron Sputtering has been investigated and even epitaxial lnAs(0.3)Sb(0.7) films have been successfully obtained. A strong effect of the growth conditions on the film structure was observed, revealing that there was a growth mechanism transition from three-dimensional nucleation growth to epitaxial layer-by-layer growth mode when increasing the substrate temperature. A qualitative explanation for that transition was proposed and the critical conditions for the epitaxial layer-by-layer growth mode were also discussed. (c) 2005 Elsevier B.V. All rights reserved.
KOS主题词: biological specimen preparation;  Ion beam lithography;  atomic layer deposition;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Alloys
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Peng CT; Chen NF; Wu JL; Yin ZG; Yu Y .Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure ,JOURNAL OF CRYSTAL GROWTH,2005,285(4):459-465
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