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题名: Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD
作者: Meng T;  Zhu XF;  Wang ZG
发表日期: 2005
摘要: In recent years, growth of GaN-based materials-related quantum dots has become a hot topic in semiconductor materials research. Considerable efforts have been devoted to growth of self-assembled quantum dots of GaN-based materials via MOCVD (Metal Organic Chemical Vapor Deposition) and there are a lot of relevant literatures. There is, however, few review papers for the topic. In this paper, different experimental methods for fabrication of quantum dots of GaN-based materials via MOCVD are critically reviewed and the experimental conditions and parameters, which may affect growth of the quantum dots, are analyzed, with an aim at providing some critical reference for the related future experiment research.
KOS主题词: Monomolecular films;  atomic layer deposition;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Optical properties
刊名: RARE METAL MATERIALS AND ENGINEERING
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Meng T; Zhu XF; Wang ZG .Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD ,RARE METAL MATERIALS AND ENGINEERING,2005,34(12):1849-1853
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