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题名: Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate
作者: Cui CX;  Chen YH;  Jin P;  Xu B;  Ren YY;  Zhao C;  Wang ZG
发表日期: 2006
摘要: By combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid soul-cc molecular beam epitaxy. Four [011] stripe-patterned substrates different in pitch, depth, and sidewall angle, respectively, are used in this work. The surface morphology obtained by atomic force microscopy shows that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate. The mechanism determining the nucleation position of the InAs dots is discussed. The optical properties of the InAs dots on the patterned substrates are also investigated by photo luminescence. (c) 2005 Elsevier B.V. All rights reserved.
KOS主题词: Gallium arsenide;  atomic layer deposition;  atomic layer deposition;  Development;  Surface;  arrays
刊名: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Cui CX; Chen YH; Jin P; Xu B; Ren YY; Zhao C; Wang ZG .Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate ,PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2006,31(1):43-47
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