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题名: Mutual passivation of donors and isovalent nitrogen in GaAs
作者: Li J;  Carrier P;  Wei SH;  Li SS;  Xia JB
发表日期: 2006
摘要: We study the mutual passivation of shallow donor and isovalent N in GaAs. We find that all the donor impurities, Si-Ga, Ge-Ga, S-As, and Se-As, bind to N in GaAsN, which has a large N-induced band-gap reduction relative to GaAs. For a group-IV impurity such as Si, the formation of the nearest-neighbor Si-Ga-N-As defect complex creates a deep donor level below the conduction band minimum (CBM). The coupling between this defect level with the CBM pushes the CBM upwards, thus restoring the GaAs band gap; the lowering of the defect level relative to the isolated Si-Ga shallow donor level is responsible for the increased electrical resistivity. Therefore, Si and N mutually passivate each other's electrical and optical activities in GaAs. For a group-VI shallow donor such as S, the binding between S-As and N-As does not form a direct bond; therefore, no mutual passivation exists in the GaAs(S+N) system.
KOS主题词: Semiconductors;  Narrow gap semiconductors;  Optical properties;  Strip;  crystal impurities;  Hydrogen
刊名: PHYSICAL REVIEW LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Li J; Carrier P; Wei SH; Li SS; Xia JB .Mutual passivation of donors and isovalent nitrogen in GaAs ,PHYSICAL REVIEW LETTERS,2006,96(3):Art.No.035505
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