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题名: Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers
作者: Deng JJ;  Zhao JH;  Bi JF;  Zheng YH;  Jia QJ;  Niu ZC;  Wu XG;  Zheng HZ
发表日期: 2006
摘要: Zincblende CrSb (zb-CrSb) layers with room-temperature ferromagnetism have been grown on relaxed and strained (In,Ga)As buffer layers epitaxially prepared on (001) GaAs substrates by molecular-beam epitaxy. The structural characterizations of CrSb layers fabricated under the two cases are studied by using synchrotron grazing incidence x-ray diffraction (GID). The results of GID experiments indicate that no sign of second phase exists in all the zb-CrSb layers. Superconducting quantum interference device measurements demonstrate that the thickness of zb-CrSb layers grown on both relaxed and strained (In,Ga)As buffer layers can be increased to similar to 12 monolayers (similar to 3.6nm), compared to similar to 3 monolayers (similar to 1nm) on GaAs directly.
KOS主题词: atomic layer deposition
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Deng JJ; Zhao JH; Bi JF; Zheng YH; Jia QJ; Niu ZC; Wu XG; Zheng HZ .Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers ,CHINESE PHYSICS LETTERS,2006,23(2):493-496
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