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题名: Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation
作者: Peng CX;  Weng HM;  Yang XJ;  Ye BJ;  Cheng B;  Zhou XY;  Han RD
发表日期: 2006
摘要: Defects in ZnO films grown by radio-frequency reactive magnetron sputtering under variable ratios between oxygen and argon gas have been investigated by using the monoenergetic positron beam technique. The dominate intrinsic defects in these ZnO samples are O vacancies (V-O) and Zn interstitials (Zn-i) when the oxygen fraction in the O-2/Ar feed gas does not exceed 70% in the processing chamber. On the other hand, zinc vacancies are preponderant in the ZnO Elms fabricated in richer oxygen environment. The concentration of zinc vacancies increases with the increasing (2) fraction. For the oxygen fraction 85%, the number of zinc vacancies that could trap positrons will be smaller. It is speculated that some unknown defects could shield zinc vacancies. The concentration of zinc vacancies in the ZnO films varies with the oxygen fraction in the growth chamber, which is in agreement with the results of photoluminescence spectra.
KOS主题词: Thin films;  room temperature;  Photoluminescence;  sedimentation;  Substrate;  Job vacancies;  Layer;  beam
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Peng CX; Weng HM; Yang XJ; Ye BJ; Cheng B; Zhou XY; Han RD .Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation ,CHINESE PHYSICS LETTERS,2006,23(2):489-492
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