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题名: Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy
作者: Chen YH;  Sun J;  Jin P;  Wang ZG;  Yang Z
发表日期: 2006
摘要: For the InAs/GaAs quantum-dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS) in combination with atomic force microscopy and photoluminescence. One transition related to the light hole in the WL has been observed clearly in RDS, from which its transition energy and in-plane optical anisotropy (OA) are determined. The evolution of WL with the InAs dot formation and ripening has been discussed. In addition, the remarkable changes in OA at the onsets of the dot formation and ripening have been observed, implying the mode transitions of atom transport between the WL and the dots.
KOS主题词: Development;  Gallium arsenide;  Surfaces
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Chen YH; Sun J; Jin P; Wang ZG; Yang Z .Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy ,APPLIED PHYSICS LETTERS,2006,88(7):Art.No.071903
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