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题名: Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells
作者: Sun Q;  Zhang JC;  Huang Y;  Chen J;  Wang JF;  Wang H;  Li DY;  Wang YT;  Zhang SM;  Yang H;  Zhou CL;  Guo LP;  Jia QJ
发表日期: 2006
摘要: Both cracked and crack-free GaN/Al0.55Ga0.45N multiple quantum wells (MQWs) grown on GaN template by metalorganic chemical vapor deposition have been studied by triple-axis X-ray diffraction, grazing-incidence X-ray reflectivity, atomic force microscope, photoluminescence spectroscopy and low-energy positron annihilation spectroscopy. The experimental results show that cracks generation not only deteriorates the surface morphology, but also leads to a period dispersion and roughens the interfaces of MQWs. The mean density of dislocations in MQWs, determined from the average full-width at half-maximum of to-scan of each satellite peak, has been significantly enhanced by the cracks generation. Furthermore, the measurement of annihilation-line Doppler broadening reveals a higher concentration of negatively charged vacancies in the cracked MQWs. The combination of these vacancies and the high density of edge dislocations are assumed to contribute to the highly enhanced yellow luminescence in the cracked sample. (c) 2005 Elsevier B.V. All rights reserved.
KOS主题词: Nitrides;  Cracking;  crack-edge stress field analysis;  Stress corrosion;  Dislocations;  X-ray crystallography;  Dislocations;  Photography--Films;  Finite volume method;  metallic superlattices;  Relaxation;  strain
刊名: APPLIED SURFACE SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun Q; Zhang JC; Huang Y; Chen J; Wang JF; Wang H; Li DY; Wang YT; Zhang SM; Yang H; Zhou CL; Guo LP; Jia QJ .Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells ,APPLIED SURFACE SCIENCE ,2006,252(8):3043-3050
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