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题名: Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure
作者: Shu Q;  Shu YC;  Zhang GJ;  Liu RB;  Yao JH;  Pi B;  Xing XD;  Lin YW;  Xu JJ;  Wang ZG
发表日期: 2006
摘要: We obtained the high mobility Of mu(2K) = 1.78 x 10(6) cm(2)/V . s in Si-doped GaAs/AlGaAs two-dimensional electron gas (2DEG) structures. After the sample was illuminated by a light-emitting diode in magnetic fields up to 6 T at T = 2K, we did observe the persistent photoconductivity effect and the electron density increased obviously. The electronic properties of 2DEG have been studied by Quantum-Hall-effect and Shubnikov-de Haas (SdH) oscillation measurements. We found that the electron concentrations of two subbands increase simultaneity with the increasing total electron concentration, and the electron mobility also increases obviously after being illuminated. At the same time, we also found that the electronic quantum lifetime becomes shorter, and a theoretical explunation is given through the widths of integral quantum Hall plateaus.
KOS主题词: Electron gas;  Quantum Hall effect;  Heterostructures;  Potential scattering;  life time;  Migration, Internal;  Gallium arsenide;  Tellurium
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Shu Q; Shu YC; Zhang GJ; Liu RB; Yao JH; Pi B; Xing XD; Lin YW; Xu JJ; Wang ZG .Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure ,ACTA PHYSICA SINICA,2006,55(3):1379-1383
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