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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Electroabsoorption-modulated laser light-source module using selective area growth for 10 Gb/s transmission
作者: Zhao Q;  Pan JQ;  Zhang J;  Li BX;  Zhou F;  Wang BJ;  Wang LF;  Bian J;  Zhao LJ;  Wang W
发表日期: 2006
摘要: In this work, a novel light source of strained InGaAsP/InGaAsP MQW EAM monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 x 10(2) Pa) selective area growth ( SAG) MOCVD technique. Superior device performances have been obtained, sue h as low threshold current of 19 mA, output light power of about 7 mW, and over 16 dB extinction ratio at 5 V applied voltage when coupled into a single mode fiber. Over 10 GHz 3 dB bandwidth in EAM part is developed with a driving voltage of 3 V. After the chip is packaged into a 7-pin butterfly compact module, 10-Gb/s NRZ transmission experiments are successfully performed in standard fiber. A clearly-open eye diagram is achieved in the module output with over 8.3 dB dynamic extinction ratio. Power penalty less than 1.5 dB has been obtained after transmission through 53.3 km of standard fiber, which demonstrates that high-speed, low chirp EAM/DFB integrated light source can be obtained by ultra-low-pressure (22 x 102 Pa) SAG method.
KOS主题词: Application-specific integrated circuits;  Optical interconnects;  atomic layer deposition
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhao Q; Pan JQ; Zhang J; Li BX; Zhou F; Wang BJ; Wang LF; Bian J; Zhao LJ; Wang W .Electroabsoorption-modulated laser light-source module using selective area growth for 10 Gb/s transmission ,ACTA PHYSICA SINICA,2006,55(3):1259-1263
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