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题名: High-precision determination of lattice constants and structural characterization of InN thin films
作者: Wu MF;  Zhou SQ;  Vantomme A;  Huang Y;  Wang H;  Yang H
发表日期: 2006
摘要: X-ray diffraction and Rutherford backscattering/channeling were used to characterize the crystalline quality of an InN layer grown on Al2O3(0001) Using metal-organic chemical-vapor deposition. A full width at half maximum of 0.27 degrees from an InN(0002) omega scan and a minimum yield of 23% from channeling measurements show that this 480-nm-thick InN layer grown at low temperature (450 degrees C) has a relatively good crystalline quality. High-resolution x-ray diffraction indicates that the InN layer contains a small fraction of cubic InN, besides the predominant hexagonal phase. From this InN sample, the lattice constants a=0.353 76 nm and c=0.570 64 nm for the hexagonal InN and a=0.4986 nm for the cubic InN were determined independently. 2 theta/omega-chi mapping and a pole figure measurement revealed that the crystallographic relationship among the cubic InN, the hexagonal InN, and the substrate is: InN[111]parallel to InN[0001]parallel to Al2O3[0001] and InN{110}parallel to InN{1120}parallel to Al2O3{1010}, and that the cubic InN is twinned. Photoluminescence measurements indicate that the band-gap energy of this sample is approximately 0.82 eV. (c) 2006 American Vacuum Society.
KOS主题词: X-ray crystallography;  Energy bands;  Thin films;  Development;  Parameters;  phase
刊名: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wu MF; Zhou SQ; Vantomme A; Huang Y; Wang H; Yang H .High-precision determination of lattice constants and structural characterization of InN thin films ,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2006,24(2):275-279
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