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题名: Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering
作者: Wang P;  Chen NF;  Yin ZG;  Yang F;  Peng CT
发表日期: 2006
摘要: Sb-doped and undoped ZnO thin films were deposited on Si (100) substrates by radio frequency (RF) magnetron sputtering. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses revealed that all the films had polycrystalline wurtzite structure and c-axis preferred orientation. Room temperature Hall measurements showed that the as-grown films were n-type and conducting (rho similar to 1-10 Omega cm). Annealing in a nitrogen ambient at 400 degrees C for 1 h made both samples highly resistive (rho > 10(3) Omega cm). Increasing the annealing temperature up to 800 C, the resistivity of the ttndoped ZnO film decreased gradually, but it increased for the Sb-doped ZnO film. In the end, the Sb-doped ZnO film annealed at 800 C became semi-insulating with a resistivity of 10(4)Omega cm. In addition, the effects of annealing treatment and Sb-doping on the structural and electrical properties are discussed. (c) 2006 Elsevier B.V. All rights reserved.
KOS主题词: biological specimen preparation;  X-ray crystallography;  Zinc oxide;  Spray pyrolysis;  Zinc oxide
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang P; Chen NF; Yin ZG; Yang F; Peng CT .Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering ,JOURNAL OF CRYSTAL GROWTH,2006,290(1):56-60
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