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题名: Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties
作者: Liang S;  Zhu HL;  Pan JQ;  Ye XL;  Wang W
发表日期: 2006
摘要: The growth of InAs quantum dots on vicinal GaAs (100) Substrates was systematically studied using low-pressure metalorganic chemical vapor deposition (MOCVD). The dots showed a clear bimodal size distribution on vicinal substrates. The way of evolution of this bimodal size distribution was studied as a function of growth temperature, InAs layer thickness and InAs deposition rate. The optical properties of dots grown on vicinal substrates were also studied by photoluminescence (PL). It was found that, compared with dots on exact substrates, dots on vicinal substrates had better optical properties such as a narrower PL line width, a longer emission wavelength, and a larger PL intensity. (c) 2006 Elsevier B.V. All rights reserved.
KOS主题词: Metal organic chemical vapor deposition;  Indium arsenide;  Islands;  Size;  Dimensions;  Lasers
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Liang S; Zhu HL; Pan JQ; Ye XL; Wang W .Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties ,JOURNAL OF CRYSTAL GROWTH,2006,289(2):477-484
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