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题名: A 1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD
作者: Zhang RY;  Wang W;  Zhou F;  Wang BJ;  Wang LF;  Bian J;  Zhao LJ;  Zhu HL;  Jian SS
发表日期: 2006
摘要: 1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well (MD-MQW) DFB lasers have been fabricated successfully by low pressure metal organic chemical vapour deposition (LP-MOCVD) technology. The experimental results indicate that n-type MD-MQWs can effectively reduce the threshold Current compared with conventional multiple quantum well DFB lasers. Theoretical analysis indicates that such an effect is due to the much smaller absorption loss and lower Auger recombination, compared with that in an undoped MQW structure. Moreover, the introduction of n-type dopant of suitable levels of concentration in the barrier layers enhances the dynamic characteristics of DFB lasers, due to a coupling between the adjacent quantum well layers and tunnelling-assisted injection, which can reduce the relatively long capture time and increase the effective differential gain 1/X dG/dn .
KOS主题词: linewidth enhancement factor;  quantum cascade lasers
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang RY; Wang W; Zhou F; Wang BJ; Wang LF; Bian J; Zhao LJ; Zhu HL; Jian SS .A 1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(3):306-310
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