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题名: Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers
作者: Zhao H;  Xu YQ;  Ni HQ;  Zhang SY;  Han Q;  Du Y;  Yang XH;  Wu RH;  Niu ZC
发表日期: 2006
摘要: Rapid thermal annealing (RTA) has been demonstrated as an important way to improve the crystal quality of GaInNAs(Sb)/GaAs quantum wells. However little investigation has been made into their application in laser growth, especially at a wavelength of 1.55 mu m. When a GaAs-based laser is grown, AlGaAs is usually used for cladding layers. The growth of the p-cladding layer usually takes 30-45 min at a growth temperature higher than that of the GaInNAs(Sb) active region, which affects the material quality. To investigate this effect, various post-growth annealing processes were performed to simulate this process. Great enhancement of the PL intensity was obtained by a two-step process which consisted of annealing first at 700 degrees C for 60 s and then at 600 degrees C for 45 min. We transferred this post-growth annealing to in situ annealing. Finally, a GaInNAsSb laser was grown with a 700 degrees C in situ annealing process. Continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength beyond 1.55 mu m was realized for the first time.
KOS主题词: atomic layer deposition;  Quantum wells;  Origin
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhao H; Xu YQ; Ni HQ; Zhang SY; Han Q; Du Y; Yang XH; Wu RH; Niu ZC .Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(3):279-282
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