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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
作者: Wang FZ;  Chen ZH;  Sun J;  Bai LH;  Huang SH;  Xiong H;  Jin P;  Wang ZG;  Shen SC
发表日期: 2006
摘要: We have investigated the evolution of exciton state filling in InAs/GaAs quantum dot (QD) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. In addition to the emission bands of exciton recombination corresponding to the atom-like S, P and D, etc. shells of QDs, it was observed that some extra states V between the S and P shells, and D' between the P and D shells appear in the spectra with increasing number of excitons occupying the QDs at a certain temperature. The emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in QDs. (c) 2006 Elsevier B.V. All rights reserved.
KOS主题词: Quantum dots;  Exciton;  Photoluminescence
刊名: JOURNAL OF LUMINESCENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang FZ; Chen ZH; Sun J; Bai LH; Huang SH; Xiong H; Jin P; Wang ZG; Shen SC .Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots ,JOURNAL OF LUMINESCENCE,2006,119(0):183-187
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