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题名: Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD
作者: Liang S;  Zhu HL;  Pan JQ;  Wang W
发表日期: 2006
摘要: Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs (100) substrates. This trend is explained by taking into account the presence of multiatomic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs(100) substrates are also studied by photoluminescence (PL). It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.
KOS主题词: Indium arsenide;  atomic layer deposition;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Chrysanthemum morifolium;  Islands;  Density;  Epitaxy;  Lasers
刊名: CHINESE PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Liang S; Zhu HL; Pan JQ; Wang W .Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD ,CHINESE PHYSICS,2006,15(5):1114-1119
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