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题名: Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering
作者: Bian LF;  Zhang CG;  Chen WD;  Hsu CC;  Qu YH;  Jiang DS
发表日期: 2006
摘要: Er-doped Si nanoclusters embedded in SiO2 (NCSO) films were prepared by radio frequency magnetron sputtering on either silicon or quartz substrates. A 1.16 mu m (1.08 eV) photoluminescence (PL) peak was observed from an Er-doped NCSO film deposited on a Si substrate. This 1.16 mu m peak is attributed to misfit dislocations at the NCSO/Si interface. The emission properties of the 1.16 mu m peak and its correlation with the Er3+ emission (1.54 mu m) have been studied in detail. The observed behavior suggests that the excitation mechanism of the 1.16 mu m PL is in a fashion similar to that shown for Er-doped Si nanoclusters embedded in a SiO2 matrix. (C) 2006 American Institute of Physics.
KOS主题词: room temperature;  Silicon;  Semiconductors;  Dislocations;  Infrared spectra;  Spectrum analysis
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Bian LF; Zhang CG; Chen WD; Hsu CC; Qu YH; Jiang DS .Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering ,JOURNAL OF APPLIED PHYSICS,2006,99(9):Art.No.094302
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