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题名: The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity
作者: Wang XF;  Zeng YP;  Wang BQ;  Zhu ZP;  Du XQ;  Li M;  Chang BK
发表日期: 2006
摘要: A new structure of GaAs photocathode was introduced. The Be-doping concentration is variable in the new structure compared with the constant concentration of Be in the normal photocathode. Negative electron affinity GaAs photocathodes were fabricated by alternate input of Cs and O. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathodes with the new structure is enhanced by at least 50% as compared to those with the monolayer structure. Accordingly, two main factors leading to the enhanced photosensitivity of the photocathodes were discussed. (c) 2005 Elsevier B.V. All rights reserved.
KOS主题词: Structure;  NEA;  Gallium arsenide;  Spectral sensitivity;  Cesium;  Surface;  Photoemission;  system
刊名: APPLIED SURFACE SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang XF; Zeng YP; Wang BQ; Zhu ZP; Du XQ; Li M; Chang BK .The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity ,APPLIED SURFACE SCIENCE ,2006,252(12):4104-4109
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