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题名: Q-switched and mode-locked diode-pumped Nd : GdVO4 laser with low temperature GaAs saturable absorber
作者: Liu J;  Wang YG;  Tian WM;  Gao LY;  He JL;  Ma XY
发表日期: 2006
摘要: Low temperature GaAs (LT-GaAs) was successfully grown at the temperature of 550 degrees C by metal organic vapor phase epitaxy on a semi-insular GaAs substrate. With such an absorber as well as an output coupler we obtain Q-switched mode-locked (QML) 1064 nm Nd:GdVO4 laser pumped by diode laser with high repetition rate, formed with a simple flat-flat cavity. The repetition rate of the Q-switched envelope increased from 100 to 660 kHz as the pump power increased from 2.28 to 7.29 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of similar to 1.36 GHz. A maximum average output power of 953 mW was obtained. The dependence of the operational parameters on the pump power was also investigated experimentally. (C) 2005 Elsevier B.V. All rights reserved.
KOS主题词: mode locking;  Q-switching;  interlocking;  mirror
刊名: OPTICAL MATERIALS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Liu J; Wang YG; Tian WM; Gao LY; He JL; Ma XY .Q-switched and mode-locked diode-pumped Nd : GdVO4 laser with low temperature GaAs saturable absorber ,OPTICAL MATERIALS,2006,28(8-9):970-973
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