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题名: Selective growth of InAs islands on patterned GaAs (100) substrate
作者: Cui CX;  Chen YH;  Ren YY;  Xu B;  Jin P;  Zhao C;  Wang ZG
发表日期: 2006
摘要: By a combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid-source molecular beam epitaxy. It is found that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate or molecular beam epitaxy growth conditions. When a InxGa(1-x)As strained layer is grown first before InAs deposition, almost all the InAs quantum dots are deposited at the edges of the top ridge. And when the InAs deposition amount is larger, a quasi-quantum wire structure is found. The optical properties of the InAs dots on the patterned substrate are also investigated by photoluminescence. (c) 2005 Elsevier Ltd. All rights reserved.
KOS主题词: atomic layer deposition;  Quantum dots;  Gallium arsenide;  atomic layer deposition;  FABRICATION
刊名: SUPERLATTICES AND MICROSTRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Cui CX; Chen YH; Ren YY; Xu B; Jin P; Zhao C; Wang ZG .Selective growth of InAs islands on patterned GaAs (100) substrate ,SUPERLATTICES AND MICROSTRUCTURES,2006,39(5):446-453
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